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Description
| - Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, were found to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it possible to con
- Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, were found to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it possible to con (en)
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Title
| - Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.
- Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties. (en)
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skos:prefLabel
| - Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.
- Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties. (en)
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skos:notation
| - RIV/61389005:_____/03:49033147!RIV/2004/AV0/A49004/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(ME 203), P(OC 527.90), Z(AV0Z1010914), Z(AV0Z1048901), Z(MSM 235200002)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/61389005:_____/03:49033147
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - silicon-carbon-nitride films; magnetron co-sputtering (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - CH - Švýcarská konfederace
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - DIAMOND AND RELATED MATERIALS
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...ocetUcastnikuAkce
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http://linked.open...nichUcastnikuAkce
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Kormunda, M.
- Peřina, Vratislav
- Zemek, Josef
- Vlček, J.
- Čížek, J.
- Soukup, Z.
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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