About: Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction

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About: Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasma-enhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 °C annealing temperature, independent of the a-Si:H sublayer thickness. We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasma-enhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 °C annealing temperature, independent of the a-Si:H sublayer thickness. (en)
Title	Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction (en)
skos:prefLabel	Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction (en)
skos:notation	RIV/49777513:23640/14:43923317!RIV15-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0088)
http://linked.open...iv/cisloPeriodika	7
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Agbo, Solomon Nwabueze Netrvalová, Marie Šutta, Pavol Calta, Pavel Prušáková, Lucie Vavruňková, Veronika
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	22774
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/14:43923317
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	X-ray diffraction; Raman spectroscopy; nanostructures; nanocrystalline silicon; multilayers; FTIR (en)
http://linked.open.../riv/klicoveSlovo	nanocrystalline silicon FTIR Raman spectroscopy X-ray diffraction multilayers nanostructures
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[321DEED29801]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi A
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Centre of the New Technologies and Materials
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	211
http://linked.open...iv/tvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie Calta, Pavel Vavruňková, Veronika Agbo, Solomon Nwabueze
http://linked.open...ain/vavai/riv/wos	000339484000006
issn	1862-6300
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1002/pssa.201330231
http://localhost/t...ganizacniJednotka	23640

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