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  • In this paper the possibility to form ultra-thin homogenous films doped by Ga (ZnO:Ga) by continual or sequential sputtering is presented. An influence of post-deposition annealing on crystalline structure of films was studied. The ability to create a highly consistent coverage (shell) of three dimensional nanostructures (GaP nanowires) by the sequential mode of sputtering was proven.
  • In this paper the possibility to form ultra-thin homogenous films doped by Ga (ZnO:Ga) by continual or sequential sputtering is presented. An influence of post-deposition annealing on crystalline structure of films was studied. The ability to create a highly consistent coverage (shell) of three dimensional nanostructures (GaP nanowires) by the sequential mode of sputtering was proven. (en)
Title
  • Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering
  • Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering (en)
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  • Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering
  • Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering (en)
skos:notation
  • RIV/49777513:23640/12:43915256!RIV13-MSM-23640___
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  • P(ED2.1.00/03.0088)
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  • 161361
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  • RIV/49777513:23640/12:43915256
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  • sequential sputtering; consistent coverage; ultra-thin films; ZnO:Ga (en)
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  • [E2857921EF2F]
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  • Niš
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  • Niš
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  • Proceedings of 28th INTERNATIONAL CONFERENCE ON MICROELETRONICS
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  • Novotný, Ivan
  • Netrvalová, Marie
  • Vávra, Ivo
  • Šutta, Pavol
  • Tvarožek, Vladimír
  • Eliáš, Peter
  • Novák, Jozef
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  • 000309119600056
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  • Electron Devices Society of the Institute of Electrical and Electronics Engineers, INC.
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  • 978-1-4673-0235-7
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  • 23640
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