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  • Anodicaly oxidized aluminum oxide (AAO) was prepared by two step process. Typical pore diameter was around 50 nm. Bottom part of AAO was covered by silver using RFMS. Silver nanowire array was covered by AsS2 by thermal evaporation. Posibility of nanowire chalcogenide glass based array of Ag migrated resistive switching cells was confirmed and its basic characteristics were investigated.
  • Anodicaly oxidized aluminum oxide (AAO) was prepared by two step process. Typical pore diameter was around 50 nm. Bottom part of AAO was covered by silver using RFMS. Silver nanowire array was covered by AsS2 by thermal evaporation. Posibility of nanowire chalcogenide glass based array of Ag migrated resistive switching cells was confirmed and its basic characteristics were investigated. (en)
Title
  • Synthesis and resistive switching of chalcogenide glass based nanowire array cells
  • Synthesis and resistive switching of chalcogenide glass based nanowire array cells (en)
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  • Synthesis and resistive switching of chalcogenide glass based nanowire array cells
  • Synthesis and resistive switching of chalcogenide glass based nanowire array cells (en)
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  • RIV/00216275:25310/12:39896015!RIV13-MSM-25310___
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  • RIV/00216275:25310/12:39896015
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  • resistive switching; nanowires; chalcogenide glass; aluminum oxide (en)
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  • Wágner, Tomáš
  • Střižík, Lukáš
  • Kolář, Jakub
  • Terabe, Kazuya
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  • 25310
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