About: Competition between thermally activated and tip-induced hopping of indium atoms on Si(100)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The adsorption and dynamics of single indium atoms on a Si(100) surface were studied by means of scanning tunneling microscopy in a temperature range from 30 to 130 K. Single In adatoms are strongly influenced by a tip-surface interaction which is proportional to the tunneling current. The adsorption and dynamics of single indium atoms on a Si(100) surface were studied by means of scanning tunneling microscopy in a temperature range from 30 to 130 K. Single In adatoms are strongly influenced by a tip-surface interaction which is proportional to the tunneling current. (en)
Title	Competition between thermally activated and tip-induced hopping of indium atoms on Si(100) Competition between thermally activated and tip-induced hopping of indium atoms on Si(100) (en)
skos:prefLabel	Competition between thermally activated and tip-induced hopping of indium atoms on Si(100) Competition between thermally activated and tip-induced hopping of indium atoms on Si(100) (en)
skos:notation	RIV/68378271:_____/12:00390822!RIV13-GA0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GAP204/10/0952), P(GD202/09/H041), P(IAA100100905), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Setvín, Martin Majzik, Zsolt
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	128132
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/12:00390822
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Si(100); scanning tunneling microscopy (en)
http://linked.open.../riv/klicoveSlovo	scanning tunneling microscopy Si(100)
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[51D8AD3FBC7C]
http://linked.open...i/riv/nazevZdroje	Physical Review. B
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Physics of nanostructures Atomic scale study of bimetallic nanostructures on the Si(100) surface Experimental and theoretical analysis of defects on metallic oxide and semiconductor surfaces.
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	85
http://linked.open...iv/tvurceVysledku	Majzik, Zsolt Setvín, Martin Javorský, J. Kocán, P. Ošt'ádal, I. Sobotík, P.
http://linked.open...ain/vavai/riv/wos	000300419900001
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1098-0121
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1103/PhysRevB.85.081403

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