About: Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors

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Description	A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software. The samples intended to use in HEMT (High Electron Mobility Transistor) devices were prepared by two different methods: (a) continuous diamond film deposition followed by selective etching and (b) the selective growth of patterned diamond films. The finite-element method on the axisymmetric geometry was used to calculate the thermal deformations of these two types of samples. The qualitative dependencies of the deformations on the diamond film thickness and the substrate material were found. The lowest stresses were found on the SiC substrate, thanks to its low thermal expansion and high Young modulus. The simulation results of the structure with continuous and selectively-grown patterned film were compared. A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software. The samples intended to use in HEMT (High Electron Mobility Transistor) devices were prepared by two different methods: (a) continuous diamond film deposition followed by selective etching and (b) the selective growth of patterned diamond films. The finite-element method on the axisymmetric geometry was used to calculate the thermal deformations of these two types of samples. The qualitative dependencies of the deformations on the diamond film thickness and the substrate material were found. The lowest stresses were found on the SiC substrate, thanks to its low thermal expansion and high Young modulus. The simulation results of the structure with continuous and selectively-grown patterned film were compared. (en)
Title	Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors (en)
skos:prefLabel	Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors (en)
skos:notation	RIV/68407700:21340/13:00211683!RIV14-MSM-21340___
http://linked.open...avai/predkladatel	Fakulta jaderná a fyzikálně inženýrská
http://linked.open...avai/riv/aktivita	S
http://linked.open...avai/riv/aktivity	S
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Babchenko, Oleg
http://linked.open.../riv/druhVysledku	O - Ostatní výsledky nezařaditelné do žádného z výše uvedených druhů výsledku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta jaderná a fyzikálně inženýrská
http://linked.open...dnocenehoVysledku	88898
http://linked.open...ai/riv/idVysledku	RIV/68407700:21340/13:00211683
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Microwave plasma; carbon structures; Langmuir probe (en)
http://linked.open.../riv/klicoveSlovo	Langmuir probe Microwave plasma carbon structures
http://linked.open...ontrolniKodProRIV	[1A69D29DED22]
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2013
http://linked.open...iv/tvurceVysledku	Babchenko, Oleg Vanko, G. Kromka, A. Jirásek, V. Ižák, T.
http://localhost/t...ganizacniJednotka	21340

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