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| rdf:type
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| Description
| - Colloid solutions with reverse micelles represent an efficient technology to prepare metal nanoparticles (NPs) which exhibit stable size and small size distribution. Size of nanoparticles can be purposely changed by adjusting parameters of colloid chemistry. Preparation of stable colloid solutions with electrically charged nanoparticles having small distribution of shape and size is a prerequisit for successful deposition of nanoparticles on the semiconductor surface by using electrophoretic deposition. In this paper colloid solutions of gold, palladium and rhodium NPs were prepared in reverse micelles, their absorption spectra were investigated, and surface plasmon absorption bands were identified. Layers of metal NPs were deposited on InP substrates by electrophoretic deposition. Structural and luminescence properties of deposited layers were investigated by SEM and low-temperature photoluminescence spectroscopy. Schottky barriers were prepared by dropping colloidal graphite onto the surface of InP, partly covered with metal nanoparticles. Current-voltage characteristics were measured and relevant parameters of Schottky barriers were evaluated. In the case of Pd nanolayers it was found that several ppm of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Sensitivity of Schottky barrier to hydrogen was measured for substrates with different coverage.
- Colloid solutions with reverse micelles represent an efficient technology to prepare metal nanoparticles (NPs) which exhibit stable size and small size distribution. Size of nanoparticles can be purposely changed by adjusting parameters of colloid chemistry. Preparation of stable colloid solutions with electrically charged nanoparticles having small distribution of shape and size is a prerequisit for successful deposition of nanoparticles on the semiconductor surface by using electrophoretic deposition. In this paper colloid solutions of gold, palladium and rhodium NPs were prepared in reverse micelles, their absorption spectra were investigated, and surface plasmon absorption bands were identified. Layers of metal NPs were deposited on InP substrates by electrophoretic deposition. Structural and luminescence properties of deposited layers were investigated by SEM and low-temperature photoluminescence spectroscopy. Schottky barriers were prepared by dropping colloidal graphite onto the surface of InP, partly covered with metal nanoparticles. Current-voltage characteristics were measured and relevant parameters of Schottky barriers were evaluated. In the case of Pd nanolayers it was found that several ppm of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Sensitivity of Schottky barrier to hydrogen was measured for substrates with different coverage. (en)
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| Title
| - Preparation and Characterization of Layers of Au, Pd and Rh Nanoparticles Deposited on n-InP Substrates
- Preparation and Characterization of Layers of Au, Pd and Rh Nanoparticles Deposited on n-InP Substrates (en)
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| skos:prefLabel
| - Preparation and Characterization of Layers of Au, Pd and Rh Nanoparticles Deposited on n-InP Substrates
- Preparation and Characterization of Layers of Au, Pd and Rh Nanoparticles Deposited on n-InP Substrates (en)
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| skos:notation
| - RIV/68407700:21340/11:00190635!RIV12-AV0-21340___
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| http://linked.open...avai/predkladatel
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
| - P(GA102/09/1037), P(KAN401220801)
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
| |
| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21340/11:00190635
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| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - colloid solutions; reverse micelles; metal nanoparticles; electrophoretic deposition; InP; Schottky diodes (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...v/mistoKonaniAkce
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| http://linked.open...i/riv/mistoVydani
| |
| http://linked.open...i/riv/nazevZdroje
| - NANOCON 2011 - Conference Proceedings
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...vavai/riv/projekt
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...iv/tvurceVysledku
| - Koštejn, Martin
- Piksová, Kateřina
- Zavadil, J.
- Žďánský, K.
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| http://linked.open...vavai/riv/typAkce
| |
| http://linked.open.../riv/zahajeniAkce
| |
| number of pages
| |
| http://purl.org/ne...btex#hasPublisher
| |
| https://schema.org/isbn
| |
| http://localhost/t...ganizacniJednotka
| |
| is http://linked.open...avai/riv/vysledek
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