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Description
| - Není k dispozici (cs)
- A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias.
- A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias. (en)
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Title
| - Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure
- Není k dispozici (cs)
- Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure (en)
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skos:prefLabel
| - Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure
- Není k dispozici (cs)
- Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure (en)
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skos:notation
| - RIV/68407700:21340/06:04126689!RIV07-AV0-21340___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21340/06:04126689
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - electroluminescence; pin diode; quantum dot; quantum nanostructure; silicon nanocrystal (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - CH - Švýcarská konfederace
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Valenta, J.
- Stuchlík, J.
- Fojtík, Anton
- Kočka, J.
- Pelant, I.
- Stuchlíková, T. H.
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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is http://linked.open...avai/riv/vysledek
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