Attributes | Values |
---|
rdf:type
| |
Description
| - The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 μm with a columnar structure. Based on these process parameters and material properties the μc-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial μc-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells.
- The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 μm with a columnar structure. Based on these process parameters and material properties the μc-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial μc-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells. (en)
|
Title
| - µc-Si solar cells by direct deposition with APCVD
- µc-Si solar cells by direct deposition with APCVD (en)
|
skos:prefLabel
| - µc-Si solar cells by direct deposition with APCVD
- µc-Si solar cells by direct deposition with APCVD (en)
|
skos:notation
| - RIV/68378271:_____/12:00386627!RIV13-AV0-68378271
|
http://linked.open...avai/predkladatel
| |
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| - P(7E10061), P(LM2011026), Z(AV0Z10100521)
|
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/12:00386627
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - epitaxy; thin film solar cell; a-Si/µ-Si; microcrystalline silicon; Si film (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...v/mistoKonaniAkce
| |
http://linked.open...i/riv/mistoVydani
| |
http://linked.open...i/riv/nazevZdroje
| - Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...vavai/riv/projekt
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...iv/tvurceVysledku
| - Ledinský, Martin
- Fejfar, Antonín
- Janz, S.
- Rachow, T.
- Reber, S.
|
http://linked.open...vavai/riv/typAkce
| |
http://linked.open.../riv/zahajeniAkce
| |
http://linked.open...n/vavai/riv/zamer
| |
number of pages
| |
http://bibframe.org/vocab/doi
| - 10.4229/27thEUPVSEC2012-3CV.2.7
|
http://purl.org/ne...btex#hasPublisher
| - WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG
|
https://schema.org/isbn
| |
is http://linked.open...avai/riv/vysledek
of | |