About: Development of n-on-p silicon sensors for very high radiation environments

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 11015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm9.75 cm large-area sensor and several 1 cm1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 11015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm9.75 cm large-area sensor and several 1 cm1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. (en)
Title	Development of n-on-p silicon sensors for very high radiation environments Development of n-on-p silicon sensors for very high radiation environments (en)
skos:prefLabel	Development of n-on-p silicon sensors for very high radiation environments Development of n-on-p silicon sensors for very high radiation environments (en)
skos:notation	RIV/68378271:_____/11:00361396!RIV13-AV0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LA08032), Z(AV0Z10100502), Z(MSM0021620859)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Böhm, Jan Mikeštíková, Marcela
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	194080
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00361396
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	silicon; micro-strip; ATLAS; SLHC; sensor; radiation damage; p-type; n-in-p (en)
http://linked.open.../riv/klicoveSlovo	ATLAS sensor silicon SLHC micro-strip n-in-p p-type radiation damage
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[5A70B2603746]
http://linked.open...i/riv/nazevZdroje	Nuclear Instruments & Methods in Physics Research Section A
http://linked.open...in/vavai/riv/obor	BF
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	74 (xsd:int)
http://linked.open...vavai/riv/projekt	International experiment ATLAS-CERN
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	636
http://linked.open...iv/tvurceVysledku	Böhm, Jan Bates, R. Mikeštíková, Marcela Affolder, A. A. Allport, P. P. Betancourt, C. Brown, H. Buttar, C. Carter, J. R. Casse, G. Unno, Y.
http://linked.open...ain/vavai/riv/wos	000291416400005
http://linked.open...n/vavai/riv/zamer	Jevy fyziky elementárních částic přesahující standardní model Výzkum vlastností jader a subjaderných částic a jejich interakcí
issn	0168-9002
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.nima.2010.04.080
is http://linked.open...avai/riv/vysledek of	Development of n-on-p silicon sensors for very high radiation environments

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