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  • Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed.
  • Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed. (en)
Title
  • Effect of local doping on the electronic properties of epitaxial graphene on SiC
  • Effect of local doping on the electronic properties of epitaxial graphene on SiC (en)
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  • Effect of local doping on the electronic properties of epitaxial graphene on SiC
  • Effect of local doping on the electronic properties of epitaxial graphene on SiC (en)
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  • RIV/68378271:_____/10:00343352!RIV11-AV0-68378271
http://linked.open...avai/riv/aktivita
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  • Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika
  • 3
http://linked.open...vai/riv/dodaniDat
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  • 256041
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  • RIV/68378271:_____/10:00343352
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  • graphene; silicon carbide; scanning tunneling microscopy; electronic structure (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV
  • [D4EB76A4926B]
http://linked.open...i/riv/nazevZdroje
  • Physica Status Solidi. A
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...UplatneniVysledku
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  • 207
http://linked.open...iv/tvurceVysledku
  • Červenka, Jiří
  • Flipse, K.
  • van der Ruit, K.
http://linked.open...ain/vavai/riv/wos
  • 000276339800021
http://linked.open...n/vavai/riv/zamer
issn
  • 1862-6300
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