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  • Elektrické vlastnosti Schottkyho diod připravených na InP:Mn vzorcích byly studovány pomocí měření DLTS, Halova jevu, kapacitně-napěťových (C-V) a volt-ampérových charakteristik (I-V). Měření Hallova jevu dává aktivační energii 220 meV pro dominantní akceptor. Analýzou I-V charakteristik byly oceněny faktor ideálnosti a svodový proud v závěrném směru. Výpočty koncentrací příměsí a výšky bariéry byly získány z C-V měření. Měření DLTS neprokázalo žádné charakteristické maximum. (cs)
  • Electrical properties of Schottky diodes prepared on InP:Mn samples were studied by capacitance-voltage (C-V), volt-ampere (I-V), DLTS and Hall effect measurements. The Hall effect measurements yield the binding energy 220 meV for dominant acceptor. By analyzing the I-V characteristics, ideality factors and reverse leakage currents were evaluated. The estimates of the doping concentration and the barrier height values were gained from C-V measurements. DLTS measurements did not show any characteristic peak.
  • Electrical properties of Schottky diodes prepared on InP:Mn samples were studied by capacitance-voltage (C-V), volt-ampere (I-V), DLTS and Hall effect measurements. The Hall effect measurements yield the binding energy 220 meV for dominant acceptor. By analyzing the I-V characteristics, ideality factors and reverse leakage currents were evaluated. The estimates of the doping concentration and the barrier height values were gained from C-V measurements. DLTS measurements did not show any characteristic peak. (en)
Title
  • Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes
  • Výzkum teplotní závislosti elektrických vlastností Schottkyho diod na InP:Mn (cs)
  • Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes (en)
skos:prefLabel
  • Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes
  • Výzkum teplotní závislosti elektrických vlastností Schottkyho diod na InP:Mn (cs)
  • Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes (en)
skos:notation
  • RIV/67985882:_____/06:00043103!RIV07-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 137;141
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  • P(KAN400670651), Z(AV0Z20670512)
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  • 480362
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  • RIV/67985882:_____/06:00043103
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  • Schottky diodes; III-V semiconductors; Hall effect (en)
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  • [6C2A4F0D9CD8]
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  • Malá Lučivná
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  • Bratislava
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  • Proceedings of the 12th International Conference on Applied Physics of Condensed Matter
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  • Kozak, Halina
  • Žďánský, Karel
  • Sopko, B.
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http://linked.open...n/vavai/riv/zamer
number of pages
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  • Slovenská technická univerzita v Bratislave
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  • 80-227-2424-6
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