About: Point and structural defects in Bi2PbxTe3 single crystals     Goto   Sponge   Distinct   Permalink

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  • The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0-80.0)x10 18 cm-3) revealed two distinct areas of influence of incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb (up to 20x10 18 cm-3 at. Pb cm-3) the ratio of generated holes to one incorporated Pb atom falls from value of 1.06 down to 0.55, at higher concentration ((20-80)x10 18 Pb at. cm-3) the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure.
  • The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0-80.0)x10 18 cm-3) revealed two distinct areas of influence of incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb (up to 20x10 18 cm-3 at. Pb cm-3) the ratio of generated holes to one incorporated Pb atom falls from value of 1.06 down to 0.55, at higher concentration ((20-80)x10 18 Pb at. cm-3) the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure. (en)
  • Studium procesu dotace monokrystalů Bi2Te3 atomy olova prokázalo dvě oblasti rozdílného vlivu atomů olova na změnu koncentrace volných nositelů proudu. Pro koncentraci olova (1-20)x10 18 cm-3 klesá poměr počtu generovaných děr na jeden atom olova z 1,06 na 0,55. Pro koncentraci olova (20x80)x10 18 cm-3 je poměr konstantní. Tato pozorovaná zdánlivá elektrická neaktivita zabudovaných atomů olova je vysvětlena jejich interakcí s přirozenými poruchami mřížky v monokrystalech Bi2Te3. (cs)
Title
  • Point and structural defects in Bi2PbxTe3 single crystals
  • Point and structural defects in Bi2PbxTe3 single crystals (en)
  • Bodové a stukturní poruchy v monokrystalech Bi2PbxTe3 (cs)
skos:prefLabel
  • Point and structural defects in Bi2PbxTe3 single crystals
  • Point and structural defects in Bi2PbxTe3 single crystals (en)
  • Bodové a stukturní poruchy v monokrystalech Bi2PbxTe3 (cs)
skos:notation
  • RIV/61389013:_____/07:00083449!RIV08-AV0-61389013
http://linked.open.../vavai/riv/strany
  • 3513;3519
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z40500505)
http://linked.open...iv/cisloPeriodika
  • 39-40
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 441945
http://linked.open...ai/riv/idVysledku
  • RIV/61389013:_____/07:00083449
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • bismuth telluride (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [A7AE2464D3A2]
http://linked.open...i/riv/nazevZdroje
  • Solid State Ionics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 177
http://linked.open...iv/tvurceVysledku
  • Navrátil, Jiří
  • Plecháček, T.
  • Lošťák, P.
  • Horák, Jaromír
  • Bachan, D.
  • Krejčová, A.
http://linked.open...n/vavai/riv/zamer
issn
  • 0167-2738
number of pages
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