About: Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.aidic.it/cet/14/41/064.pdf
Description	Iron oxide (alpha-Fe2O3) in hematite crystalline structure and tungsten trioxide have recently attracted much attention as possibly convenient materials to be used for hydrogen production via photoelectrochemical water splitting. Thius is due to their favorable properties such as band gaps between 2.0 - 2.2 eV (alpha-Fe2O3) and 2.5-2.8 eV (WO3) which allows absorbing of a substantial fraction of solar spectrum. FTO glass substrates were used for both types of films. Tungsten trioxide films were prepared by sedimentation of WO3 particles and further annealing at different temperatures to improve adhesion. Iron oxide (alpha-Fe2O3) hematite films were prepared by advanced pulsed plasma deposition method of High Power Impulse Magnetron Sputtering (HiPIMS). The films were evaluated on the basis of physical properties such as crystalline structure, surface topography and electrical behavior. The functional properties were investigated under simulated photoelectrochemical (PEC) water splitting conditions. Different excitation lights were used: monochromatic (very narrow single peak at light spectra) and the standard solar illumination conditions (AM 1.5 G). Also the influence of the electrolyte/electrode and substrate/electrode illumination of layers was studied. As deposited WO3 films have rather small photocurrents. Higher annealing temperature results in better adhesion of particles and increase in photocurrent. Optimum annealing temperature is 450-500 degrees C. Increase of the annealing temperature to 600 degrees C caused the formation of undesirable crystal phases (produced by the reaction of WO3 and FTO layer) and significant decrease in photocurrent. Despite confirmed hematite phase of as-deposited films, these were almost photoelectrochemically inactive. Iron oxide (alpha-Fe2O3) in hematite crystalline structure and tungsten trioxide have recently attracted much attention as possibly convenient materials to be used for hydrogen production via photoelectrochemical water splitting. Thius is due to their favorable properties such as band gaps between 2.0 - 2.2 eV (alpha-Fe2O3) and 2.5-2.8 eV (WO3) which allows absorbing of a substantial fraction of solar spectrum. FTO glass substrates were used for both types of films. Tungsten trioxide films were prepared by sedimentation of WO3 particles and further annealing at different temperatures to improve adhesion. Iron oxide (alpha-Fe2O3) hematite films were prepared by advanced pulsed plasma deposition method of High Power Impulse Magnetron Sputtering (HiPIMS). The films were evaluated on the basis of physical properties such as crystalline structure, surface topography and electrical behavior. The functional properties were investigated under simulated photoelectrochemical (PEC) water splitting conditions. Different excitation lights were used: monochromatic (very narrow single peak at light spectra) and the standard solar illumination conditions (AM 1.5 G). Also the influence of the electrolyte/electrode and substrate/electrode illumination of layers was studied. As deposited WO3 films have rather small photocurrents. Higher annealing temperature results in better adhesion of particles and increase in photocurrent. Optimum annealing temperature is 450-500 degrees C. Increase of the annealing temperature to 600 degrees C caused the formation of undesirable crystal phases (produced by the reaction of WO3 and FTO layer) and significant decrease in photocurrent. Despite confirmed hematite phase of as-deposited films, these were almost photoelectrochemically inactive. (en)
Title	Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films (en)
skos:prefLabel	Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films (en)
skos:notation	RIV/60461373:22310/14:43898482!RIV15-GA0-22310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP108/12/2104)
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Zlámal, Martin Krýsa, Josef
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	36485
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/14:43898482
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	photo-electrochemical properties, water splitting; particle layers; magnetron sputtering; TiO2; WO3 (en)
http://linked.open.../riv/klicoveSlovo	magnetron sputtering water splitting TiO2 WO3 photo-electrochemical properties particle layers
http://linked.open...ontrolniKodProRIV	[2D8063536689]
http://linked.open...v/mistoKonaniAkce	Chia
http://linked.open...i/riv/mistoVydani	Milano
http://linked.open...i/riv/nazevZdroje	Chemical Engineering Transactions
http://linked.open...in/vavai/riv/obor	CG
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Advanced semiconductor materials for photoelectrochemical water splitting
http://linked.open...UplatneniVysledku	2014
http://linked.open...iv/tvurceVysledku	Kment, Štěpán Krýsa, Josef Hubička, Zdeněk Zlámal, Martin
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000346539800064
http://linked.open.../riv/zahajeniAkce	2014-09-28 (xsd:date)
issn	2283-9216
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.3303/CET1441064
http://purl.org/ne...btex#hasPublisher	AIDIC Servizi
https://schema.org/isbn	978-88-95608-32-7
http://localhost/t...ganizacniJednotka	22310

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