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  • Increasing the solar cell conversion efficiency together with reducing their production cost are the trends of the last years which are necessary for the near future grid parity of “the energy from sun”. This paper deals mainly with the first part of trends, i.e., with enhanced cell efficiency while keeping the production cost nearly the same or even lower. To be able to recognize the influence of individual cell parameters on the final conversion efficiency, plenty of various characterization methods are supplemented by the modelling approach using the PC1D simulation program. We show how the most important parameters like minority carrier lifetime, surface recombination velocity (at the front and rear interface) and internal reflectivity of both free surfaces influence the cell performance. Parameters for the modelling were chosen in the real ranges coming from the long time experience with the c-Si technology. We point out the main technological fundamentals to keep the “high quality range” of all the most important parameters.
  • Increasing the solar cell conversion efficiency together with reducing their production cost are the trends of the last years which are necessary for the near future grid parity of “the energy from sun”. This paper deals mainly with the first part of trends, i.e., with enhanced cell efficiency while keeping the production cost nearly the same or even lower. To be able to recognize the influence of individual cell parameters on the final conversion efficiency, plenty of various characterization methods are supplemented by the modelling approach using the PC1D simulation program. We show how the most important parameters like minority carrier lifetime, surface recombination velocity (at the front and rear interface) and internal reflectivity of both free surfaces influence the cell performance. Parameters for the modelling were chosen in the real ranges coming from the long time experience with the c-Si technology. We point out the main technological fundamentals to keep the “high quality range” of all the most important parameters. (en)
Title
  • Approaches towards c-Si Industrial Solar Cell Production with Conversion Efficiency above 20%
  • Approaches towards c-Si Industrial Solar Cell Production with Conversion Efficiency above 20% (en)
skos:prefLabel
  • Approaches towards c-Si Industrial Solar Cell Production with Conversion Efficiency above 20%
  • Approaches towards c-Si Industrial Solar Cell Production with Conversion Efficiency above 20% (en)
skos:notation
  • RIV/49610040:_____/10:#0000011!RIV13-MPO-49610040
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(1M06031), P(2A-1TP1/075), P(FR-TI1/168), P(FT-TA3/142)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 247571
http://linked.open...ai/riv/idVysledku
  • RIV/49610040:_____/10:#0000011
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • c-Si solar cell; carrier lifetime; surface recombination velocity; internal reflection (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [2736C4CD6698]
http://linked.open...v/mistoKonaniAkce
  • Prague
http://linked.open...i/riv/mistoVydani
  • Prague
http://linked.open...i/riv/nazevZdroje
  • Proceedings of the 5th International Workshop on Teaching Photovoltaic, Prague, March 2010
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Bařinka, Radim
  • Bařinková, Pavlína
  • Hladík, Jiří
  • Poruba, Aleš
  • Čech, Pavel
  • Mudroň, Igor
  • Řehák, Jaromír
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • Neuveden
https://schema.org/isbn
  • 978-80-01-04532-9
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