About: A Gelation process in SiO2-H2O System in the presence of Calcium Acetate Monohydrate.     Goto   Sponge   Distinct   Permalink

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Description
  • Interakce solu SiO2 s monohydrátem octanu vápenatého, jako aditivní látky která urychluje gelaci soustavy, byla sledována měřením zeta potenciálu. Byly hodnoceny podmínky gelace, která probíhá tvorbou agregátů kyseliny křemičité, kdy v přítomnosti vápenatých iontů dochází k iontové výměně na povrchu SiO2 částic. Se zvyšováním koncentrace vápenatých iontů v soustavě dochází k vzrůstu zeta potenciálu ze záporných do kladných hodnot. Hodnota pH systému klesá s rostoucí koncentrací octanu vápenatého. Byl urrčen izoelektrický bod soustavy, který při pH=7,5 odpovídá molárnímu poměru r=0,347 (log r=-0,46) a to odpovídá molární koncentraci octanu vápenatého c= 0,182 a 0,524 mol.dm-3 SiO2 . (cs)
  • A sol of silicon dioxide has been used for modeling of the interactions of calcium salt with SiO2-H2O in high dispersive system. The dependence of the zeta potential on concentration of calcium acetate in SiO2-H2O system has been characterized at lower concentration of acetate by negative values. Isoelectric point has been determined at ratio molar concentration of acetate to silicon dioxide r= c(calciumacetate)/c (SiO2)=0,347. This work is focused on determination of optimum condidtions for gelation, ccontrol of sol stability and explaining of gelation mechanism by ion exchange on silica surface.
  • A sol of silicon dioxide has been used for modeling of the interactions of calcium salt with SiO2-H2O in high dispersive system. The dependence of the zeta potential on concentration of calcium acetate in SiO2-H2O system has been characterized at lower concentration of acetate by negative values. Isoelectric point has been determined at ratio molar concentration of acetate to silicon dioxide r= c(calciumacetate)/c (SiO2)=0,347. This work is focused on determination of optimum condidtions for gelation, ccontrol of sol stability and explaining of gelation mechanism by ion exchange on silica surface. (en)
Title
  • A Gelation process in SiO2-H2O System in the presence of Calcium Acetate Monohydrate.
  • A Gelation process in SiO2-H2O System in the presence of Calcium Acetate Monohydrate. (en)
  • Gelace v systému SiO2-H2O v přítomnosti monohydrátu octanu vápenatého. (cs)
skos:prefLabel
  • A Gelation process in SiO2-H2O System in the presence of Calcium Acetate Monohydrate.
  • A Gelation process in SiO2-H2O System in the presence of Calcium Acetate Monohydrate. (en)
  • Gelace v systému SiO2-H2O v přítomnosti monohydrátu octanu vápenatého. (cs)
skos:notation
  • RIV/00216305:26310/04:PU46578!RIV06-GA0-26310___
http://linked.open.../vavai/riv/strany
  • 41-48
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA203/94/1568)
http://linked.open...iv/cisloPeriodika
  • 2
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http://linked.open...aciTvurceVysledku
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  • 552915
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  • RIV/00216305:26310/04:PU46578
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  • sol SiO2, hydrosilicate gel, zeta potential, isoelectric point (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [E81E79D3E3D4]
http://linked.open...i/riv/nazevZdroje
  • Ceramics-Silikáty
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 48
http://linked.open...iv/tvurceVysledku
  • Havlica, Jaromír
  • Fasurová, Naděžda
issn
  • 0862-5468
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http://localhost/t...ganizacniJednotka
  • 26310
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