About: Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

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Description	In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. We carried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples. In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. We carried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples. (en)
Title	Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect (en)
skos:prefLabel	Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect (en)
skos:notation	RIV/00216305:26220/10:PU87703!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GAP102/10/2013), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Koktavý, Pavel Macků, Robert
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	258144
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU87703
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	solar cell, excess reverse current, electric model, transistor structure (en)
http://linked.open.../riv/klicoveSlovo	solar cell electric model excess reverse current transistor structure
http://linked.open...ontrolniKodProRIV	[58D5080048B1]
http://linked.open...v/mistoKonaniAkce	Praha
http://linked.open...i/riv/mistoVydani	Wroclaw
http://linked.open...i/riv/nazevZdroje	2010 9th International Conference on Environment end Electrical engineerong
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Fluctuation processes in PN junctions of solar cells
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Koktavý, Pavel Macků, Robert
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-05-16 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Reprotechnika Wroclaw
https://schema.org/isbn	978-1-4244-5374-0
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

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