About: Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology. A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology. (en)
Title	Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy (en)
skos:prefLabel	Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy (en)
skos:notation	RIV/00216305:26220/10:PU87506!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/0859), Z(MSM0021630516)
http://linked.open...iv/cisloPeriodika	7720
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Luňák, Miroslav Chobola, Zdeněk Vaněk, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	274949
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU87506
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Noise, GaSb, Laser (en)
http://linked.open.../riv/klicoveSlovo	Laser Noise GaSb
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[200A28E72202]
http://linked.open...i/riv/nazevZdroje	Proceedings of SPIE
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	2010
http://linked.open...iv/tvurceVysledku	Chobola, Zdeněk Hulicius, Eduard Luňák, Miroslav Vaněk, Jiří
http://linked.open...n/vavai/riv/zamer	Zdroje, akumulace a optimalizace využití energie v podmímkách trvale udržitelného rozvoje
issn	0277-786X
number of pages	7 (xsd:int)
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

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