About: Modeling of quantization effects in NMOSFET channel

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Modeling of quantization effects in NMOSFET channel Goto Sponge Distinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	popis (cs) In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT. In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT. (en)
Title	Modeling of quantization effects in NMOSFET channel Modelování kvantizačních jevů v NMOSFET kaníle (cs) Modeling of quantization effects in NMOSFET channel (en)
skos:prefLabel	Modeling of quantization effects in NMOSFET channel Modelování kvantizačních jevů v NMOSFET kaníle (cs) Modeling of quantization effects in NMOSFET channel (en)
skos:notation	RIV/00216305:26220/07:PU71778!RIV08-MSM-26220___
http://linked.open.../vavai/riv/strany	442-446
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Recman, Milan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	434326
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/07:PU71778
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, 2D, Threshold voltage, Quantization effects, Van Dort model, Density gradient model, Schroedinger-Poisson solver (en)
http://linked.open.../riv/klicoveSlovo	2D Density gradient model Quantization effects Schroedinger-Poisson solver Van Dort model Parameter extraction Curve fitting Device modeling Device simulation Electrical simulation Threshold voltage
http://linked.open...ontrolniKodProRIV	[6347D83E7103]
http://linked.open...v/mistoKonaniAkce	BRNO
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	1 (xsd:int)
http://linked.open...UplatneniVysledku	2007
http://linked.open...iv/tvurceVysledku	Recman, Milan
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2007-09-20 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Ing. Zdeněk Novotný CSc.
https://schema.org/isbn	978-80-214-3470-7
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Modeling of quantization effects in NMOSFET channel Modeling of quantization effects in NMOSFET channel Modeling of quantization effects in NMOSFET channel

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 117 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software