Electronic and structural changes induced by irradiation or annealing in pulsed laser deposited As50Se50 films were studied by XPS and UPS techniques.
Electronic and structural changes induced by irradiation or annealing in pulsed laser deposited As50Se50 films were studied by XPS and UPS techniques. (en)
Technikami XPS a UPS byly studovány elektronické and strukturní změny ve vrstvách As50Se50 deponovaných pulzním laserem indukované expozicí nebo temperací (cs)