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  • The optical absorption edge of bulk CdTe single crystal was measured by infrared transmission under saturated Cd pressure in the temperature interval 295-1223 K. The absorption coefficient was directly determined up to the value of 100 cm(-1). For higher values, it was estimated by extrapolating the spectra according to the Urbach exponential rule. It was observed that the common temperature-independent intersection of extrapolated Urbach absorption edge, the %22Urbach focus,%22 does not exist in CdTe. The temperature dependence of band-gap energy E-g defined by E-g(300 K) = 1.518 eV and dE(g)/dT = - 4.4 x 10(-4) eV/K was established, postulating linear temperature dependence of E-g by fitting the temperature dependent absorption coefficient at the band edge alpha(g)(T) = 6600 - 4T (K) (cm(-1)).
  • The optical absorption edge of bulk CdTe single crystal was measured by infrared transmission under saturated Cd pressure in the temperature interval 295-1223 K. The absorption coefficient was directly determined up to the value of 100 cm(-1). For higher values, it was estimated by extrapolating the spectra according to the Urbach exponential rule. It was observed that the common temperature-independent intersection of extrapolated Urbach absorption edge, the %22Urbach focus,%22 does not exist in CdTe. The temperature dependence of band-gap energy E-g defined by E-g(300 K) = 1.518 eV and dE(g)/dT = - 4.4 x 10(-4) eV/K was established, postulating linear temperature dependence of E-g by fitting the temperature dependent absorption coefficient at the band edge alpha(g)(T) = 6600 - 4T (K) (cm(-1)). (en)
Title
  • High temperature optical absorption edge of CdTe single crystal
  • High temperature optical absorption edge of CdTe single crystal (en)
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  • High temperature optical absorption edge of CdTe single crystal
  • High temperature optical absorption edge of CdTe single crystal (en)
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  • RIV/00216208:11320/14:10288359!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I, P(GA13-13671S), P(TE01020445), S
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  • 10
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  • 19101
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  • RIV/00216208:11320/14:10288359
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  • cdte; semiconductors; infrared absorption dependence; energy-gap; cadmium telluride (en)
http://linked.open.../riv/klicoveSlovo
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  • US - Spojené státy americké
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  • [3240FB4EB875]
http://linked.open...i/riv/nazevZdroje
  • Journal of Applied Physics
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  • 116
http://linked.open...iv/tvurceVysledku
  • Belas, Eduard
  • Grill, Roman
  • Hlídek, Pavel
  • Uxa, Štěpán
  • Bugár, Marek
  • Šedivý, Lukáš
http://linked.open...ain/vavai/riv/wos
  • 000342833700033
issn
  • 0021-8979
number of pages
http://bibframe.org/vocab/doi
  • 10.1063/1.4895494
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  • 11320
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