About: Phase transitions in thin a-Si:H films induced by pulsed UV laser irradiation

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Phase transitions in thin a-Si:H films induced by pulsed UV laser irradiation Goto Sponge Distinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Projekt, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	http://linked.opendata.cz/ontology/domain/vavai/Projekt
rdfs:seeAlso	http://www.isvav.cz/projectDetail.do?rowId=IAA110433
Description	Bude odvozen teoretický model popisující tání a solidifikaci tenkých vrstev a-Si:H. Tento model bude zahrnovat jak procesy solidifikace na fázovém rozhraní, tak procesy nukleace v závislosti na tepelné historii vzorku. Fenomenologický model, založený na bilanci tepla v systému, bude ověřen experimentem. Dynamika charakteristických parametrů a fázové transformace během ozařování pulsním laserem bude sledována měřením TRR (time resolve reflectivity) v závislosti na složení a tloušťce vrstvy a na parametrech pulsu laseru. Struktura, optické parametry a vodivost výsledné vrstvy budou analyzovány běžnými metodami. Porozumění dynamice fázové transformace v a-Si:H tenkých vrstvách nám umožní přípravu struktury (polykrystalické, amorfní nebo porézní) vhodné pro technickou aplikaci.
Title	Phase transitions in thin a-Si:H films induced by pulsed UV laser irradiation (en) Fázové změny v tenkých vrstvách a-Si:H vyvolané pulsním laserovým UV zářením
skos:notation	IAA110433
http://linked.open...avai/cep/aktivita	Grants of distinctly investigative character focused on the sphere of research pursued at present particularly in the Academy of Sciences of the Czech Republic
http://linked.open...kovaStatniPodpora	http://linked.opendata.cz/resource/domain/vavai/projekt/IAA110433/celkovaStatniPodpora
http://linked.open...ep/celkoveNaklady	http://linked.opendata.cz/resource/domain/vavai/projekt/IAA110433/celkoveNaklady
http://linked.open...ep/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open.../cep/fazeProjektu	255862
http://linked.open...ai/cep/hlavniObor	BM - Fyzika pevných látek a magnetismus
http://linked.open...ep/partnetrHlavni	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...inujicichPrijemcu	0 (xsd:int)
http://linked.open...cep/pocetPrijemcu	1 (xsd:int)
http://linked.open...ocetSpoluPrijemcu	0 (xsd:int)
http://linked.open.../pocetVysledkuRIV	27 (xsd:int)
http://linked.open...enychVysledkuVRIV	27 (xsd:int)
http://linked.open...iciPoslednihoRoku	1997
http://linked.open...atUdajeProjZameru	1997
http://linked.open...usZobrazovaneFaze	DUU
http://linked.open...ai/cep/typPojektu	P - Projekt výzkumu a vývoje financovaný ze státního rozpočtu
http://linked.open...tniCyklusProjektu	ZBKU
is http://linked.open...vavai/riv/projekt of	Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation. Light emitting silicon prepared by laser annealing of a-Si:H. Inverse growth kinetics on InSb(11O). The influence of interface kinetics on the morphological stability of directional solidification of melts. Formation of luminescent silicon by laser annealing of a-Si:H. Theoretical and Experimental Studies of a-Si:H Recrystallization by XeCl Excimer Laser Irradiation. Thermal Models of Pulsed Laser processing of Semiconductors in Electronic Components. A one-dimensional description of surface diffusion for adlayers with lateral interactions. Influence of variations of temporal pulse shape in excimer laser processing of semiconductors. Light absorption effects on the dynamics of the Nd:YAG laser annealing. Electronic structure of the laser annealed Si(111)1x1 surface. Determination of the reflectivity of liquid semiconductors over a wide temperature range. On Algebras Without Generalized Topological Divisors of Zero. Properties of recrystallized amorphous silicon prepared by XeCl excimer laser irradiation. Non-equilibrium phase diagrams in the PbCl2-AgCl eutectic system. Computational Modeling of Chemical Reactions in a Metal-Si System with Phase Change. Connection between thermodynamic properties and diffusion coefficient for a system of non-interacting particles on a lattice with two non-equivalent sites. Time resolved reflectivity studies of phase transitions in polycrystalline Si induced by excimer laser irradiation. Theoretical models of fast crystallization of a-Si thin films. Time-resolved reflectivity studies of phase transitioin in polycrystalline Si induced by excimer laser irradiation. Temperature dependence of the surface diffusion coefficient of K atoms on Pd(111) measured with PEEM. Surface diffusion of oxygen on Ge{100} (2x1) surface studied by laser induced thermal desorption method (LITD). Dynamics of laser induced phase transformations in amorphous silicon. Theoretical and experimental studies of a-Si:H recrystallization by XeCl excimer laser irradiation. Vacancy island nucleation and inverse growth of InSb (110). Terrace distribution during sputtering and recovery of InSb(110) studied by He-atom scattering. Dynamics of Laser Induced Phase Transformations.
is http://linked.open...vavai/cep/projekt of	http://linked.opendata.cz/resource/domain/vavai/cep/ucast/IAA110433/1994/ico%3A68378271 http://linked.opendata.cz/resource/domain/vavai/cep/ucast/IAA110433/1995/ico%3A68378271 http://linked.opendata.cz/resource/domain/vavai/cep/ucast/IAA110433/1996/ico%3A68378271 http://linked.opendata.cz/resource/domain/vavai/cep/ucast/IAA110433/1997/ico%3A68378271

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 117 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software