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Description
| - For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF).
- For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF). (en)
- For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF). (cs)
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Title
| - Proton Irradiation and Temperature Annealing of Microcrystalline Silicon
- Proton Irradiation and Temperature Annealing of Microcrystalline Silicon (en)
- Proton Irradiation and Temperature Annealing of Microcrystalline Silicon (cs)
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skos:prefLabel
| - Proton Irradiation and Temperature Annealing of Microcrystalline Silicon
- Proton Irradiation and Temperature Annealing of Microcrystalline Silicon (en)
- Proton Irradiation and Temperature Annealing of Microcrystalline Silicon (cs)
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skos:notation
| - RIV/68407700:21340/04:04105382!RIV/2005/MSM/213405/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21340/04:04105382
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - absorption loss; back reflector; mobility recombination; photoconductivity; roughness (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - The 14th Seminar of Development of Material Science in Research and Education
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Poruba, A.
- Hoďáková, Lenka
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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