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Description
  • High-power P-I-N diodes (2.5 kV, 150 A) with sputtered Mo layer at anode were annealed in the range 550 - 800 oC with and without the previous 10 MeV helium implantation. The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements.
  • High-power P-I-N diodes (2.5 kV, 150 A) with sputtered Mo layer at anode were annealed in the range 550 - 800 oC with and without the previous 10 MeV helium implantation. The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. (en)
Title
  • Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control
  • Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control (en)
skos:prefLabel
  • Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control
  • Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control (en)
skos:notation
  • RIV/68407700:21230/10:00169675!RIV11-MSM-21230___
http://linked.open...avai/riv/aktivita
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  • P(LC06041), Z(MSM6840770017)
http://linked.open...vai/riv/dodaniDat
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  • 257863
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  • RIV/68407700:21230/10:00169675
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  • PIN diode; molybdenum; palladium; platinum; helium; carrier lifetime (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [33BE914161CC]
http://linked.open...v/mistoKonaniAkce
  • Praha
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  • Praha
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  • ISPS'10 PROCEEDINGS
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  • Vobecký, Jan
  • Komarnitskyy, Volodymyr
  • Záhlava, Vít
http://linked.open...vavai/riv/typAkce
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number of pages
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  • České vysoké učení technické v Praze
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  • 978-80-01-04602-9
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  • 21230
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