About: Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ºC and GaAs pores at 700-850ºC converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ºC and GaAs pores at 700-850ºC converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates (en)
Title	Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures (en)
skos:prefLabel	Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures (en)
skos:notation	RIV/68378271:_____/11:00374724!RIV13-GA0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GAP108/10/0253), Z(AV0Z10100521), Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	186902
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00374724
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	porous semiconductors; heterotransitions; electrochemical etching of metals (en)
http://linked.open.../riv/klicoveSlovo	electrochemical etching of metals heterotransitions porous semiconductors
http://linked.open...ontrolniKodProRIV	[348B106134D1]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	NANOCON 2011, Conference Proceedings, 3 rd International Conference
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Gladkov, Petr Grym, Jan Hulicius, Eduard Nohavica, Dušan Pangrác, Jiří
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000306686700021
http://linked.open.../riv/zahajeniAkce	2011-09-21 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	TANGER Ltd., Ostrava
https://schema.org/isbn	978-80-87294-27-7

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