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rdf:type
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Description
| - Preparation of thin film silicon at high growth rate is an important target for its application in solar cells. The properties of hydrogenated microcrystalline silicon, prepared with the help of PECVD multi-hole cathode in a high pressure and depletion regime in a wide range of thicknesses are described in detail. We illustrate the surprising result that we can prepare high growth rate microcrystalline silicon from 0.4 up to 30 μm thickness without great peel-off problems. The room temperature dark DC conductivity, as well as the crystallinity, increased up to 5 μm film thickness and then started to decrease again. These results are explained by the initial temperature profiling and a thickness-induced increase of the lateral inhomogeneity.
- Preparation of thin film silicon at high growth rate is an important target for its application in solar cells. The properties of hydrogenated microcrystalline silicon, prepared with the help of PECVD multi-hole cathode in a high pressure and depletion regime in a wide range of thicknesses are described in detail. We illustrate the surprising result that we can prepare high growth rate microcrystalline silicon from 0.4 up to 30 μm thickness without great peel-off problems. The room temperature dark DC conductivity, as well as the crystallinity, increased up to 5 μm film thickness and then started to decrease again. These results are explained by the initial temperature profiling and a thickness-induced increase of the lateral inhomogeneity. (en)
- Příprava tenkých křemíkových vrstev za vysoké rychlosti růstu je důležitým cílem pro použití ve slunečních článcích. Jsou popsány vlastnosti hydrogenovaného mikrokrystalického křemíku připraveného pomocí PECVD s mnohonásobnou dutinovou katodou při vysokém tlaku v režimu ochuzené směsi v rozsahu tlouštěk od 0,4 μm až do 30 μm bez problémů s loupáním vrstev. (cs)
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Title
| - Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses
- Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses (en)
- Vlastnosti tenkých křemíkových vrstev připravených vysokou rychlostí růstu v širokém rozsahu tlouštěk (cs)
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skos:prefLabel
| - Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses
- Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses (en)
- Vlastnosti tenkých křemíkových vrstev připravených vysokou rychlostí růstu v širokém rozsahu tlouštěk (cs)
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skos:notation
| - RIV/68378271:_____/08:00320320!RIV09-AV0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GD202/05/H003), P(IAA1010316), P(IAA1010413), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/08:00320320
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - conductivity; plasma deposition (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Non-Crystalline Solids
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Ledinský, Martin
- Fejfar, Antonín
- Stuchlík, Jiří
- Kočka, Jan
- Stuchlíková, The-Ha
- Mates, Tomáš
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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