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rdf:type
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Description
| - Vodík neobsahující vrstvy a-C:Si s koncentrací Si od 3 do 70 at.% byly připravovány magnetronovým ko-sputteringem z targetů z čistého grafitu a křemíku. Mechanické vlastnosti (tvrdost,vnitřní pnutí),složení vrstev (EPMA a XPS) a struktura (elektronová difrakce a ramanova spektroskopie) byly zkoumány v závislosti na koncentraci Si, předpětí na substrátu a depoziční teplotě. Maximum tvrdosti bylo dosaženo při koncentraci Si 45 at.% a při depozičních teplotách 600 a 800 °C. Reflexní elektronová difrakce indikovala amorfní strukturu připravovaných vrstev. Ramanovy spektra ukazují na existenci 3 pásů odpovídajících klastrům Si, SiC a C pro koncentrace Si z intervalu 35 - 70 at.% (cs)
- Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon targets.Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for -45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of prepared films.Raman spectra showed that the films in the range of 35 - 70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters
- Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon targets.Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for -45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of prepared films.Raman spectra showed that the films in the range of 35 - 70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters (en)
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Title
| - Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering
- Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering (en)
- Tvrdost nanokompozitních vrstev a-C:Si deponovaných magnetronovým naprašováním (cs)
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skos:prefLabel
| - Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering
- Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering (en)
- Tvrdost nanokompozitních vrstev a-C:Si deponovaných magnetronovým naprašováním (cs)
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skos:notation
| - RIV/68378271:_____/07:00096427!RIV08-AV0-68378271
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(OC 095), P(OC 097), Z(AV0Z10100520), Z(AV0Z10100521), Z(AV0Z10100522)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/07:00096427
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - a-C:Si hydrogen-free films,; hardness; raman spectroscopy; XPS (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - CH - Švýcarská konfederace
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Diamond and Related Materials
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Jastrabík, Lubomír
- Zemek, Josef
- Boháč, Petr
- Kulykovskyy, Valeriy
- Vorlíček, Vladimír
- Kurdymov, A.
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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