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Description
  • We have studied the initial stage of formation of carbon nanotube layers in surface decomposition of SiC substrate by meansof spectroscopic ellipsometry. Before heating, the surface of the SiC substrate was covered with an SiO layer that had been formed by natural oxidation. By heating up to 1100 C, reduction of SiO layer occurs. Between 1150 and 1300 C, the surface of SiC decomposes and a (graphiteqvoid) layer is formed on the surface. Then, by heating at 1300 C for longer time, a carbon nanotube layer is formed. As a result, we have detected the beginning of the surface decomposition at 1150 C and the beginning of the formation of a carbon nanotube layer at 1300 C.
  • We have studied the initial stage of formation of carbon nanotube layers in surface decomposition of SiC substrate by meansof spectroscopic ellipsometry. Before heating, the surface of the SiC substrate was covered with an SiO layer that had been formed by natural oxidation. By heating up to 1100 C, reduction of SiO layer occurs. Between 1150 and 1300 C, the surface of SiC decomposes and a (graphiteqvoid) layer is formed on the surface. Then, by heating at 1300 C for longer time, a carbon nanotube layer is formed. As a result, we have detected the beginning of the surface decomposition at 1150 C and the beginning of the formation of a carbon nanotube layer at 1300 C. (en)
  • Spektrální elipsometrie sestavy uhlíkových nanotrubic v SiC povrchovém rozkladu (cs)
Title
  • Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition
  • Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition (en)
  • Spektrální elipsometrie sestavy uhlíkových nanotrubic v SiC povrchovém rozkladu (cs)
skos:prefLabel
  • Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition
  • Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition (en)
  • Spektrální elipsometrie sestavy uhlíkových nanotrubic v SiC povrchovém rozkladu (cs)
skos:notation
  • RIV/61989100:27350/04:00011059!RIV/2005/GA0/273505/N
http://linked.open.../vavai/riv/strany
  • 339-343
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/03/0776), Z(MSM 272400019)
http://linked.open...iv/cisloPeriodika
  • 455-456
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 587391
http://linked.open...ai/riv/idVysledku
  • RIV/61989100:27350/04:00011059
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • carbon nanotube;silicon carbide;surface decomposition;spectroellipsometry (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [C3B25CE34B02]
http://linked.open...i/riv/nazevZdroje
  • Thin Solid Films
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • Neuveden
http://linked.open...iv/tvurceVysledku
  • Postava, Kamil
  • Takahashi, K.
  • Maeda, H.
  • Aoyama, M.
  • Matsumoto, K.
  • Kawaguchi, Y.
http://linked.open...n/vavai/riv/zamer
issn
  • 0040-6090
number of pages
http://localhost/t...ganizacniJednotka
  • 27350
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