TEA CO2 laser-induced dielectric breakdown in equimolar mixture of gaseous stannane and germane in Ar allows chemical vapor deposition of nanostructured Ge/Sn films revealed as nanoregions of crystalline Sn and Sn-rich Ge/Sn alloys surrounded by amorphous Ge/Sn phase.
TEA CO2 laser-induced dielectric breakdown in equimolar mixture of gaseous stannane and germane in Ar allows chemical vapor deposition of nanostructured Ge/Sn films revealed as nanoregions of crystalline Sn and Sn-rich Ge/Sn alloys surrounded by amorphous Ge/Sn phase. (en)
TEA CO2 laserem indukovaný dielektrický průraz v eqimolární směsi plynného germanu a stananu v Ar dovoluje chemickou deposici nanostrukturovaných filmů obsahujících nanodomény Sn/Ge slitiny obklopené amorfní Ge/Sn fází. (cs)