About: Reaction of nickel-based ohmic contacts with n-type 4H silicon carbide

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevent We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevent (en)
Title	Reaction of nickel-based ohmic contacts with n-type 4H silicon carbide Reaction of nickel-based ohmic contacts with n-type 4H silicon carbide (en)
skos:prefLabel	Reaction of nickel-based ohmic contacts with n-type 4H silicon carbide Reaction of nickel-based ohmic contacts with n-type 4H silicon carbide (en)
skos:notation	RIV/60461373:22310/09:00021635!RIV10-MSM-22310___
http://linked.open...avai/riv/aktivita	S
http://linked.open...avai/riv/aktivity	S
http://linked.open...iv/cisloPeriodika	neuvedeno
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Macháč, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	338190
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/09:00021635
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	SiC; Nickel; Nickel silicide; Ohmic contacts (en)
http://linked.open.../riv/klicoveSlovo	Nickel silicide Ohmic contacts Nickel SiC
http://linked.open...odStatuVydavatele	CZ - Česká republika
http://linked.open...ontrolniKodProRIV	[5B0861995A14]
http://linked.open...i/riv/nazevZdroje	ElectroScope
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	V2009
http://linked.open...iv/tvurceVysledku	Barda, Bohumil Machač, Petr
issn	1802-4564
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	22310

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