About: Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functions arising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry and spectroscopic ellipsometry. Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functions arising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry and spectroscopic ellipsometry. (en)
Title	Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function (en)
skos:prefLabel	Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function (en)
skos:notation	RIV/49777513:23640/12:43916616!RIV13-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0088)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie Očenášek, Jan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	150427
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/12:43916616
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	a-Si:H, ?c-Si:H, optical properties (en)
http://linked.open.../riv/klicoveSlovo	optical properties ?c-Si:H a-Si:H
http://linked.open...ontrolniKodProRIV	[38EC2BED45A5]
http://linked.open...v/mistoKonaniAkce	Frankfurt, Německo
http://linked.open...i/riv/mistoVydani	München
http://linked.open...i/riv/nazevZdroje	Proceedings 27th European Photovoltaic Solar Energy Conference and Exhibition
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Centre of the New Technologies and Materials
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Netrvalová, Marie Očenášek, Jan Šutta, Pavol Prušáková, Lucie Müllerová, Jarmila
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2012-09-24 (xsd:date)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	WIP
https://schema.org/isbn	3-936338-28-0
http://localhost/t...ganizacniJednotka	23640

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