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  • The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed.
  • The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed. (en)
Title
  • Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications
  • Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications (en)
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  • Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications
  • Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications (en)
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  • RIV/49777513:23640/10:00503377!RIV11-MSM-23640___
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  • P(1M06031), S
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  • 263605
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  • RIV/49777513:23640/10:00503377
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  • ZnO; dopants; optical properties; structure (en)
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  • [FA213F4288A9]
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  • Niš, Serbia
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  • Niš
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  • Proceedings 27th International Conference on Microelectronics
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  • Novotný, Ivan
  • Netrvalová, Marie
  • Šutta, Pavol
  • Prušáková, Lucie
  • Tvarožek, Vladimír
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  • Electron Devices Society of the Institute of Electrical and Electronics Engineers, inc.
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  • 978-1-4244-7198-0
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  • 23640
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