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Description
  • Zinc oxide (ZnO) belongs to the wide energy band-gap II-VI binary semiconductors with many interesting physical properties. Non-stoichiometric ZnO is a native n-type semiconductor, and it is quite easy to increase its conductivity by its doping using appropriate element. Somewhat difficult is ZnO doping to p-type conductivity. The paper deals with the research of p-type conductivity of ZnO thin films doped by nitrogen and their physical properties. The films were prepared by RF diode sputter deposition from ceramic ZnO target with different argon/nitrogen working gas mixture.
  • Zinc oxide (ZnO) belongs to the wide energy band-gap II-VI binary semiconductors with many interesting physical properties. Non-stoichiometric ZnO is a native n-type semiconductor, and it is quite easy to increase its conductivity by its doping using appropriate element. Somewhat difficult is ZnO doping to p-type conductivity. The paper deals with the research of p-type conductivity of ZnO thin films doped by nitrogen and their physical properties. The films were prepared by RF diode sputter deposition from ceramic ZnO target with different argon/nitrogen working gas mixture. (en)
Title
  • Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering
  • Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering (en)
skos:prefLabel
  • Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering
  • Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering (en)
skos:notation
  • RIV/49777513:23640/09:00502623!RIV10-MSM-23640___
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  • 314258
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  • RIV/49777513:23640/09:00502623
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  • Zinc oxide; p-type; sputtering (en)
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  • [3D0A6125A050]
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  • Micro Electronic and Mechanical Systems
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  • Novotný, Ivan
  • Šutta, Pavol
  • Shtereva, Krasimira
  • Kovac, Jaroslav
  • Tvarozek, Vladimír
number of pages
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  • In-Teh
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  • 978-953-307-027-8
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  • 23640
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