About: Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials     Goto   Sponge   Distinct   Permalink

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  • Amorfní materiály byly vytvářeny pomocí reaktivního magnetronového naprašování a jejich vysokoteplotní stabilita byla zkoumána experimentálně a pomocí MD simulací. Bylo ukázáno, že teploní stabilita roste s poměrem Si/C a v důsledku přidání boru. Životnost stejných vazeb je při vyšším poměru Si/C výrazně delší. Přidání boru vede ke konverzi některých volných párů valenčních elektronů asociovaných s N na valenční elektrony, což zvyšuje celkové koordinační číslo. Oba tyto jevy posouvají rozkladné reakce v materiálech k vyšším teplotám. (cs)
  • Amorphous Si-B-C-N alloys were deposited by reactive magnetron sputtering, and their high-temperature stability was investigated using a combined approach of experiment and molecular-dynamics simulations. We show that both a higher Si/C ratio and the addition of boron improve the thermal stability of the materials. We find that lifetimes of bonds of the same type are significantly longer at the higher Si/C ratio. The addition of boron results in a conversion of some of the electrons in lone pairs associated with nitrogen to bonding electrons.This increases the network's average coordination number. In both cases, the higher network coordination number and resulting lower diffusion, expressed in terms of longer bond lifetimes, shift decomposition reactions in materials to higher temperatures.
  • Amorphous Si-B-C-N alloys were deposited by reactive magnetron sputtering, and their high-temperature stability was investigated using a combined approach of experiment and molecular-dynamics simulations. We show that both a higher Si/C ratio and the addition of boron improve the thermal stability of the materials. We find that lifetimes of bonds of the same type are significantly longer at the higher Si/C ratio. The addition of boron results in a conversion of some of the electrons in lone pairs associated with nitrogen to bonding electrons.This increases the network's average coordination number. In both cases, the higher network coordination number and resulting lower diffusion, expressed in terms of longer bond lifetimes, shift decomposition reactions in materials to higher temperatures. (en)
Title
  • Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials
  • Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials (en)
  • Vliv obsahu B a poměru Si/C na vysokoteplotní stabilitu materiálů Si-B-C-N (cs)
skos:prefLabel
  • Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials
  • Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials (en)
  • Vliv obsahu B a poměru Si/C na vysokoteplotní stabilitu materiálů Si-B-C-N (cs)
skos:notation
  • RIV/49777513:23520/06:00000230!RIV07-MSM-23520___
http://linked.open.../vavai/riv/strany
  • 512
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  • Z(MSM4977751302)
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  • 472965
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  • RIV/49777513:23520/06:00000230
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  • Si-B-C-N materials; temperature stability; molecular dynamics; N2 molecules formation; bond lifetimes (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • FR - Francouzská republika
http://linked.open...ontrolniKodProRIV
  • [8594A64A7C19]
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  • Europhysics Letters
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http://linked.open...UplatneniVysledku
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  • Houška, Jiří
  • Vlček, Jaroslav
  • Hřeben, Stanislav
  • Bilek, Marcela
  • McKenzie, David
http://linked.open...n/vavai/riv/zamer
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  • 0295-5075
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  • 23520
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