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Description
  • Metoda MCC (Method of Controlled Contamination) byla vyvinuta v ON SEMICONDUCTOR CZECH REPUBLIC pro měření getračních schopností křemíkových desek. MCC je založena na řízené konatminaci křemíkové desky a následné visualizaci odpovídajících defektů. Změřili jsme getrační schopnosti Si desek a zjistili jsme řádově vyšší getrační schopnosti desek Si:B ve srovnání s deskami Si:As/Sb. Getrační kapacita desek Si:B po vysokoteplotním žíhání vzrostla, pro Si:As/Sb nebyly zjištěny měřitelné změny. Různé chování křemíkových desek odpovídá odlišnému obsahu kyslíku a precipitaci kyslíku v závislosti na teplotní historii krystalu. Legování N v každém případě podporovalo precipitaci kyslíku a zvýšilo tak getrační schopnosti desek (cs)
  • Method of controlled contamination (MCC) was developed in ON SEMICONDUCTOR CZECH REPUBLIC for measurement of gettering efficiency of silicon wafers. This method is based on quantified contamination of wafer backside and after delineating of corresponding haze (the form of agglomerates of etch pits) on the front side. We noted better gettering of Si:B compared to Si:As/Sb. The gettering ability of Si:B increases after heat treatment against no changes of Si:As/Sb. This behaviour is fully related to different oxygen content and different precipitation in dependence of crystal thermal history. Doping by N initiated oxygen precipitation and significantly higher gettering ability was measured for all samples.
  • Method of controlled contamination (MCC) was developed in ON SEMICONDUCTOR CZECH REPUBLIC for measurement of gettering efficiency of silicon wafers. This method is based on quantified contamination of wafer backside and after delineating of corresponding haze (the form of agglomerates of etch pits) on the front side. We noted better gettering of Si:B compared to Si:As/Sb. The gettering ability of Si:B increases after heat treatment against no changes of Si:As/Sb. This behaviour is fully related to different oxygen content and different precipitation in dependence of crystal thermal history. Doping by N initiated oxygen precipitation and significantly higher gettering ability was measured for all samples. (en)
Title
  • Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination
  • Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination (en)
  • Studium getrační schopnosti křemíkových desek metodou řízené kontaminace (cs)
skos:prefLabel
  • Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination
  • Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination (en)
  • Studium getrační schopnosti křemíkových desek metodou řízené kontaminace (cs)
skos:notation
  • RIV/26821532:_____/05:#0000002!RIV08-MPO-26821532
http://linked.open.../vavai/riv/strany
  • 42-43
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(FI-IM2/131)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 542605
http://linked.open...ai/riv/idVysledku
  • RIV/26821532:_____/05:#0000002
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Silicon, gettering, crystal, contamination (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [E36EC14F7080]
http://linked.open...v/mistoKonaniAkce
  • Kežmarské Žľaby (SR)
http://linked.open...i/riv/mistoVydani
  • Bratislava (SR)
http://linked.open...i/riv/nazevZdroje
  • Development of Materials Science in Research and Education
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Lorenc, Michal
  • Válek, Lukáš
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • Czech and Slovak Association for Crystal Growth
https://schema.org/isbn
  • 80-89088-42-2
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