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  • Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.
  • Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis. (en)
Title
  • AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate
  • AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate (en)
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  • AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate
  • AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate (en)
skos:notation
  • RIV/00216305:26220/13:PU106136!RIV14-GA0-26220___
http://linked.open...avai/riv/aktivita
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  • P(ED2.1.00/03.0072), P(GAP102/11/0995)
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  • 59695
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  • RIV/00216305:26220/13:PU106136
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  • AlN epilayer, saphire, roughness, AFM, fractal analysis, measurement (en)
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  • [CF3796B0830C]
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  • Snolenice
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  • Bratislava
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  • Proceedings of 8th Solid State Surfaces and Interfaces
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  • Grmela, Lubomír
  • Tománek, Pavel
  • Škarvada, Pavel
  • Dallaeva, Dinara
  • Stach, Sebastian
  • Talu, Mihai
  • Talu, Stefan
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number of pages
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  • Univerzita Komenského v Bratislave
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  • 978-80-223-3501-0
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  • 26220
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