About: Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The effect of ions diffusion on time dependence of noise and polarization phenomena of CdTe bulk single crystals has been carried out. We evaluated the instability of the reverse current of the Schottky contact at the P-type CdTe and the Au interface by a model which considers the effects of deep acceptors. The results shows small detrapping time compared to the experimental measurements. We suggested the diffusion of ions in depletion region at the metal - semiconductor (M-S) interface causes an additional reduction of the barrier and may be considered as another responsible mechanism for the polarization effect. The effect of ions diffusion on time dependence of noise and polarization phenomena of CdTe bulk single crystals has been carried out. We evaluated the instability of the reverse current of the Schottky contact at the P-type CdTe and the Au interface by a model which considers the effects of deep acceptors. The results shows small detrapping time compared to the experimental measurements. We suggested the diffusion of ions in depletion region at the metal - semiconductor (M-S) interface causes an additional reduction of the barrier and may be considered as another responsible mechanism for the polarization effect. (en)
Title	Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals (en)
skos:prefLabel	Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals Low Frequency Noise and Ions Diffusion in the CdTe Bulk Single Crystals (en)
skos:notation	RIV/00216305:26220/11:PU95379!RIV12-MSM-26220___
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GAP102/11/0995), S, Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Grmela, Lubomír Šik, Ondřej Šikula, Josef Zajaček, Jiří Elhadidy, Hassan Ali Mohamed
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	210007
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/11:PU95379
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Noise, CdTe, Metal- Semiconductor interface, Ion diffusion (en)
http://linked.open.../riv/klicoveSlovo	Noise Ion diffusion Metal- Semiconductor interface CdTe
http://linked.open...ontrolniKodProRIV	[73EE2BECB662]
http://linked.open...v/mistoKonaniAkce	Toronto, Kanada
http://linked.open...i/riv/mistoVydani	Kanada
http://linked.open...i/riv/nazevZdroje	21st International Conference on Noise and Fluctuations
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Grmela, Lubomír Šikula, Josef Šik, Ondřej Elhadidy, Hassan Ali Mohamed Zajaček, Jiří
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2011-06-12 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE
https://schema.org/isbn	978-1-4577-0191-7
http://localhost/t...ganizacniJednotka	26220

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