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rdf:type
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Description
| - Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.
- Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation. (en)
- Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation. (cs)
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Title
| - RTS noise in submicron devices
- RTS noise in submicron devices (en)
- RTS šum v submikronových součástkách (cs)
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skos:prefLabel
| - RTS noise in submicron devices
- RTS noise in submicron devices (en)
- RTS šum v submikronových součástkách (cs)
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skos:notation
| - RIV/00216305:26220/07:PU70494!RIV08-GA0-26220___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/05/2095), Z(MSM0021630503)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/07:PU70494
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - RTS noise, 1/f noise, MOSFET, HFET, GaN, InGaAs (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Pavelka, Jan
- Tacano, Munecazu
- Šikula, Josef
- Chvátal, Miloš
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
| - Vysoké učení technické v Brně
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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