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Description
| - Změřili jsme šumové charakteristiky epitaxních vrstev GaN na safírové podložce a GaN/AlGaN HFET struktur na safíru nebo SiC v teplotním rozsahu 13K až 300K. Ohmické kontakty byly vyrobeny pomocí Ti/Al/Ni/Au a kontaktní šum shledán zanedbatelným pomocí TLM analýzy. Hoogeův parametr epitaxního GaN byl 2x10-3 při 300K a postupně klesal na 10-4 v okolí 50K. HFETy GaN/AlGaN na SiC měly alfaH hodnoty v rozmezí 10-4 až 10-5. (cs)
- Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5.
- Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5. (en)
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Title
| - Hooge Noise Parameter of GaN HFETs on SiC
- Hooge Noise Parameter of GaN HFETs on SiC (en)
- Hoogeův parametr šumu GaN HFETů na SiC (cs)
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skos:prefLabel
| - Hooge Noise Parameter of GaN HFETs on SiC
- Hooge Noise Parameter of GaN HFETs on SiC (en)
- Hoogeův parametr šumu GaN HFETů na SiC (cs)
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skos:notation
| - RIV/00216305:26220/05:PU52162!RIV06-MSM-26220___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/05:PU52162
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - GaN, 1/f noise, HFET (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Pavelka, Jan
- Tacano, Munecazu
- Šikula, Josef
- Tanuma, Nobuhisa
- Okumura, Hajime
- Yagi, Shuichi
- Hashiguchi, Sumihisa
- Uemura, T.
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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