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Description
  • Tenkovrstvé EL součástky(TFELD) nabízejí vysoké rozlišení a kompaktnost obrazovek pro počítače či TV. Realizace plnohodnotných barevných TFELD představuje problém, způsobený nedostatečnou svítivostí modrého záření. K překonání tohoto problému je nutné studovat mechanismu elektroluminiscence detailněji. Základní mechanismus EL je založen urychlení elektronů pomocí vysokého pole tak, aby se dostaly do oblasti optických energií, při nichž je možné excitovat jednotlivá zrnka fluoroforu. Tedy transport elekttronů v elektrickém poli je klíčovým procesem protože určuje energii elektronů. Tento proces je výsledkem interakce urychlení elektornů elektrickým polem a rozptylem elektronů. Nabitá centra obecně v EL vrstvě existují. V tomto článku je zkoumán procesrozptylu elektronů na těchto centech, který se projevuje v posunu fáze. Rozptyly, získané v jednotlivých případech jsou porovnánvány s ostatními mechanismy rozptylu. Proces transportu elektronů je simulován pomocí Monte Carlo metody. Jsou ukázány kvanti (cs)
  • Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechannism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including
  • Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechannism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including (en)
Title
  • Influence of charged centers on transport properties of thin film electroluminescent devices
  • Vliv nábojů na transportní vlastnosti tenkovrstvých EL součástek (cs)
  • Influence of charged centers on transport properties of thin film electroluminescent devices (en)
skos:prefLabel
  • Influence of charged centers on transport properties of thin film electroluminescent devices
  • Vliv nábojů na transportní vlastnosti tenkovrstvých EL součástek (cs)
  • Influence of charged centers on transport properties of thin film electroluminescent devices (en)
skos:notation
  • RIV/00216305:26220/05:PU50418!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 145-146
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
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  • 524645
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/05:PU50418
http://linked.open...riv/jazykVysledku
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  • thin-film electroluminescent device, phosphors, charged center, transport properties, near-field investigations (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [8FAAC82417A6]
http://linked.open...v/mistoKonaniAkce
  • Praha
http://linked.open...i/riv/mistoVydani
  • Prague
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  • Photonics Prague 2005
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Tománek, Pavel
  • Ahmed, Mustafa M. Abdalla
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Zeithamlová Milena, Ing. - Agentura Action M
https://schema.org/isbn
  • 80-86742-08-3
http://localhost/t...ganizacniJednotka
  • 26220
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