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Description
| - In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9).
- In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9). (en)
- Příspěvek se zabývá tvorbou a analýzou ultratenkých vrstev GaN připravených metodou přímé depozice. (cs)
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Title
| - Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
- Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition (en)
- Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem (cs)
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skos:prefLabel
| - Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
- Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition (en)
- Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem (cs)
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skos:notation
| - RIV/00216305:26210/05:PU54245!RIV06-MSM-26210___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26210/05:PU54245
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Gallium; GaN; direct deposition (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...i/riv/kodPristupu
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/mistoVydani
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Kostelník, Petr
- Mach, Jindřich
- Spousta, Jiří
- Voborný, Stanislav
- Šikola, Tomáš
- Bábor, Petr
- Čechal, Jan
- Potoček, Michal
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http://linked.open...rzeVyzkumneZpravy
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http://linked.open...n/vavai/riv/zamer
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http://localhost/t...ganizacniJednotka
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