About: Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Er- and Pr-doped Ga-La-S thin films were deposited by ns PLD and their structural, chemical and optical properties were analyzed by optical and electron microscopy, profilometry, X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry (TOF-SIMS), energy-dispersive X-ray spectroscopy, variable-angle spectroscopic ellipsometry and optical transmission. Films deposited at moderate fluence (4 J/cm2) in UV (266 nm) presented a good surface quality, while exhibiting acceptable composition uniformity and deviations from stoichiometry in line with the literature. Er- and Pr-doped Ga-La-S thin films were deposited by ns PLD and their structural, chemical and optical properties were analyzed by optical and electron microscopy, profilometry, X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry (TOF-SIMS), energy-dispersive X-ray spectroscopy, variable-angle spectroscopic ellipsometry and optical transmission. Films deposited at moderate fluence (4 J/cm2) in UV (266 nm) presented a good surface quality, while exhibiting acceptable composition uniformity and deviations from stoichiometry in line with the literature. (en)
Title	Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films (en)
skos:prefLabel	Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films (en)
skos:notation	RIV/00216275:25310/14:39898081!RIV15-MSM-25310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(7AMB13FR039), P(EE2.3.30.0058), P(GA13-05082S)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Němec, Petr Nazabal, Virginie Olivier, Mélinda
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Pardubice / Fakulta chemicko-technologická
http://linked.open...dnocenehoVysledku	40898
http://linked.open...ai/riv/idVysledku	RIV/00216275:25310/14:39898081
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	rare earths; Ga-La-S; thin films; amorphous chalcogenides; pulsed laser deposition (en)
http://linked.open.../riv/klicoveSlovo	rare earths amorphous chalcogenides pulsed laser deposition thin films Ga-La-S
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[A9B2354E09A7]
http://linked.open...i/riv/nazevZdroje	Applied Physics A-Materials Science & Procesing
http://linked.open...in/vavai/riv/obor	JH
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Plasma processes for amorphous chalcogenides thin films growth Development of Research Teams at the University of Pardubice Analysis and application of plasma assisted processes for the fabrication of amorphous chalcogenide thin films
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	117
http://linked.open...iv/tvurceVysledku	Němec, Petr Nazabal, Virginie Focsa, C. Gurlui, S. Olivier, Mélinda Pompilian, O. G. Cimpoesu, N. Dascalu, G. Mihaila, I.
http://linked.open...ain/vavai/riv/wos	000342281800033
issn	0947-8396
number of pages	9 (xsd:int)
http://bibframe.org/vocab/doi	10.1007/s00339-014-8359-6
http://localhost/t...ganizacniJednotka	25310

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