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  • Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí (cs)
  • Thin amorphous films of GexSe1-x system, where x = 0.22-0.28, were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt) of the layers were studied and discussed. The exposure and annealing causes bleaching of films, Egopt values are thus increasing. The structure is influenced only marginally by exposure as it results from Raman spectra, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between the fragments formed during pulsed laser deposition.
  • Thin amorphous films of GexSe1-x system, where x = 0.22-0.28, were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt) of the layers were studied and discussed. The exposure and annealing causes bleaching of films, Egopt values are thus increasing. The structure is influenced only marginally by exposure as it results from Raman spectra, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between the fragments formed during pulsed laser deposition. (en)
Title
  • Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí (cs)
  • Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition
  • Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition (en)
skos:prefLabel
  • Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí (cs)
  • Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition
  • Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition (en)
skos:notation
  • RIV/00216275:25310/04:00001527!RIV08-MSM-25310___
http://linked.open.../vavai/riv/strany
  • P-09-019
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  • P(GP203/04/P087), P(LN00A028)
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  • 588513
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  • RIV/00216275:25310/04:00001527
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  • amorphous chalcogenides; thin films; pulsed laser deposition (en)
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  • [F9819FF1308D]
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  • Kyoto
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  • Tokyo
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  • XX International Congress on Glass
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  • Frumar, Miloslav
  • Němec, Petr
  • Černošek, Zdeněk
  • Jedelský, Jaroslav
  • Štábl, Marek
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number of pages
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  • The Ceramic Society of Japan
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  • 4-931298-43-5
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  • 25310
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