About: Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.

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About: Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors. Goto Sponge Distinct Permalink

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Description	The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of hazardous gases. Advanced characterization techniques are employed to study the metal-semiconductor interface and to characterize the local interfacial structure. (en) Příprava struktur kovové nanočástice-polovodič III-V na epitaxních vrstvách různého složení připravených z kapalné a plynné fáze. Charakterizace a modelování tohoto rozhraní a studium optických vlastností. Možnosti aplikace v senzorech vodíku. (cs)
Title	Úloha rozhraní při přípravě Schottkyho bariér vysoké kvality na polovodičích III-V (cs) Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors. (en)
http://linked.open...vai/cislo-smlouvy	http://linked.opendata.cz/resource/domain/vavai/cep/smlouva/MSMT-7027/2012-36
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http://linked.open...vai/klicova-slova	III-V semiconductors epitaxial layers metal nonoparticles metal-semiconductor interface Schottky barrier (en)
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is http://linked.open...ain/vavai/projekt of	http://linked.opendata.cz/resource/domain/vavai/cep/ucast/2012/LD12014/ico-67985882 http://linked.opendata.cz/resource/domain/vavai/cep/ucast/2013/LD12014/ico-67985882

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